Cypress Computer Hardware AN20639 User Manual

Comparison between CY14B256L  
and STK14C88-3 nvSRAM  
AN20639  
Author: Shivendra Singh  
Associated Project: No  
Associated Part Family: CY14B256L and STK14C88-3  
Associated Application Notes: None  
Application Note Abstract  
This application note compares the CY14B256L (0.25 μm) and the STK14C88-3 (0.8 μm) devices and presents the results.  
Most applications use autostore and autorecall features of  
nvSRAM. To simplify the comparison, all electrical parame-  
ters which may affect the application performance directly or  
indirectly are considered. Designers must consider these dif-  
Introduction  
CY14B256L and STK14C88-3 are both 256K (32K x 8), 3V  
nvSRAMs in two different technologies, 0.25 μm and 0.8 μm  
respectively. These parts are functionally similar and can be  
ferences, and if necessary do appropriate changes in their  
used in the same applications. However there are differences  
design.  
in parameters, which should be considered when replacing  
one part with the other.  
Only those specifications that differ between CY14B256L  
(0.25 μm) and STK14C88-3 (0.8 μm) nvSRAM are listed in  
Table 1. These specifications may cause functional issues  
when replacing one part with the other.  
The specifications in the data sheets of CY14B256L (0.25  
μm) and STK14C88-3 (0.8 μm) are compared. Table 1 lists  
the differences between these two devices. This comparison  
is not intended to be comprehensive, because there are sub-  
tle differences that are not relevant in most applications.  
Table 1. Comparison Table  
Specification  
Endurance  
CY14B256L (35 nsec)  
STK14C88-3 (35 nsec)  
200,000 cycles  
1,000,000 cycles  
100 year  
Retention  
20 year  
DC Electrical Characteristics  
Vcc  
Icc1  
Icc3  
Icc4  
VIH  
2.7V min  
3.6V max  
3.0V min  
3.6V max  
55 mA max  
10 mA max  
3 mA max  
52 mA max  
9 mA max  
2 mA max  
2.0V min  
Vcc + 0.3V max  
2.2V min  
Vcc + 0.5V max  
]
Vcap [  
Cin  
17 µF min  
120 µF max  
7 pF max  
68 µF min  
220 µF max  
5 pF max  
AC Switching Characteristics  
tOHA  
3 ns min  
3 ns min  
3 ns min  
5 ns min  
5 ns min  
5 ns min  
tLZCE  
tLZWE  
Note  
1. STK14C88-3 applications usually specify the use of 68 µF or 100 µF capacitors, which fall within the range of the CY14B256L device.  
November 11, 2008  
Document No. 001-20639 Rev. *C  
1
 
   
AN20639  
Document History Page  
Document Title: Comparison between CY14B256L and STK14C88-3 nvSRAM  
Document Number: 001-20639  
Orig. of Submission  
Revision ECN No. Change  
Date  
08/23/07  
10/16/07  
11/19/07  
11/20/08  
Description of Change  
**  
1410463  
1639723  
1758963  
2610582  
ZSK  
ZSK  
ZSK  
NXR  
New application note  
*A  
*B  
*C  
Changed title  
Minor change  
Changed title. Updated content to reflect change in part number  
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© Cypress Semiconductor Corporation, 2007-2008. The information contained herein is subject to change without notice. Cypress Semiconductor  
Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any  
license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or  
safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical  
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failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress' product in a life-support systems application implies  
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Use may be limited by and subject to the applicable Cypress software license agreement.  
November 11, 2008  
Document No. 001-20639 Rev. *C  
3
 

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