This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3SE020G
Silicon epitaxial planar type
For cellular phone
■ Package
■ Features
•
•
Code
High-frequency wave detection is possible
•
•
SSMini3-F3
Pin Name
Low forward voltage VF
Small terminal capacitance Ct
•
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Symbol
VR
Rating
Unit
V
20
■ Marking Symbol: M6B
VRM
IF
20
V
Forward current
Single
35
25
mA
■ Internal Connection
Series
Single
3
Peak forward
IFM
100
mA
current
Series
70
Junction temperature
Storage temperature
Tj
125
°C
1
2
Tstg
−55 to +125
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Forward voltage
Symbol
Conditions
Min
Typ
Max
0.40
1.0
Unit
VF1
VF2
IR
IF = 1 mA
V
IF = 35 mA
Reverse current
VR = 15 V
200
1.2
nA
pF
Ω
Terminal capacitance
Forward dynamic resistance
Ct
VR = 0 V, f = 1 MHz
rf
IF = 5 mA
9
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
Publication date: October 2007
SKH00213AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3SE020G
SSMini3-F3
Unit: mm
1.60 +0.05
0.26 +0.05
−0.03
−
0.02
3
1
2
0.13 +0.05
−0.02
(0.50)
(0.50)
1.00 0.05
(5°)
SKH00213AED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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